Control of Electronic Properties of Organic Semiconductor
Control of Electronic Properties of Organic Semiconductor
复制标题
有机半导体电子性能的控制
DOI：
10.4028/www.scientific.net/amr.287-290.725
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
C. Kloc
中科院分区：
文献类型：
--
作者：
K. Tan;Keke Zhang;Shuang Liang;Wai;S. Mhaisalkar;C. Kloc
有机场效应晶体管的电子特性限制了基于印刷有机半导体构建的集成电路的效率。为了控制红荧烯、并四苯、四氰基醌二甲烷（TCNQ）、铜酞菁等高效半导体的迁移率，在单晶表面制备了单晶场效应晶体管并测量了特性。在红荧烯单晶上测量到最高的迁移率。通过气隙场效应晶体管测量的生长晶体的迁移率在 10 cm2/Vs 范围内，但在还原过程中降至 1 cm2/Vs 以下。据观察，测量的迁移率取决于场效应晶体管所用的电介质。
The electronic properties of organic field effect transistors limit the efficiency of integrated circuits build on basis of printed organic semiconductors. In order to control the mobility of high efficient semiconductors, like rubrene, tetracene, tetracyanoquinodimethane (TCNQ), copper phthalocyanine and many others, single-crystal field-effect transistors have been prepared on surfaces of single crystals and characteristics have been measured. The highest mobility has been measured on rubrene single crystals. The mobility of as-grown crystals measured by air-gap field effect transistor is in the range of 10 cm2/Vs but falls below 1 cm2/Vs during reduction. It was observed that the measured mobility depends on the dielectric used for field effect transistors.