Band structure modulation by carrier doping in random-network carbon nanotube transistors
Band structure modulation by carrier doping in random-network carbon nanotube transistors
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DOI：
10.1063/1.2219389
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发表时间：
2006-07
影响因子：
4
通讯作者：
Shuichi Nakamura;Megumi Ohishi;M. Shiraishi;T. Takenobu;Y. Iwasa;H. Kataura
中科院分区：
文献类型：
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作者：
Shuichi Nakamura;Megumi Ohishi;M. Shiraishi;T. Takenobu;Y. Iwasa;H. Kataura
我们研究了肖特基势垒（SB）在载流子掺杂随机网络单壁碳纳米管场效应晶体管（rn - swnt - fet）中的作用，并通过适当的栅极和源极漏极电压组合精确估计了SB的高度。在p型和n型场效应管中，空穴SB高度为70meV，电子SB高度为100meV。此外，可以通过改变掺杂水平来调节势垒高度，这表明可以控制rn - swnt - fet的特性。
We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70meV for hole and 100meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.