First observation of scattering of sub-GeV electrons in ultrathin Si crystal at planar alignment and its relevance to crystal-assisted 1D rainbow scattering
First observation of scattering of sub-GeV electrons in ultrathin Si crystal at planar alignment and its relevance to crystal-assisted 1D rainbow scattering
复制标题
首次观察平面排列超薄硅晶体中亚 GeV 电子的散射及其与晶体辅助一维彩虹散射的相关性
DOI:
10.1016/j.physletb.2018.08.063
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发表时间:
2018
影响因子:
4.4
通讯作者:
T. A. Tukhfatullin
中科院分区:
文献类型:
--
作者:
Y. Takabayashi;Yu. L. Pivovarov;T. A. Tukhfatullin
Here we report on the first measurements of 255 MeV electron scattering by an ultrathin 0.58 μm Si(111) crystal at angles of incidence less than the Lindhard critical angle. Computer simulations of trajectories in the ultrathin crystal explain the appearance of specific angular distributions of scattered electrons as a sequence of multiple-value connections between the points of incidence and deflection (scattering) angle. This is similar to the classical rainbow scattering (RS) of waves and particles on a three-dimensional (3D) potential. The principal difference is that scattering by the ultrathin crystal under channeling conditions is dependent on two additional parameters – the crystal thickness (longitudinal size of one-dimensional (1D) potential formed by the periodically arranged crystal planes) and the angle between the beam and crystal planes. The results of simulations agree with the experimental data. The obtained results contribute to an understanding of the physics of relativistic sub-GeV electron scattering by ultrathin crystals and allow it to be recognized as the fourth scattering type among doughnut scattering, scattering at planar alignment, and mirroring, i.e., one-dimensional 1D rainbow scattering (1D-RS).