Enhanced electric control of magnetic anisotropy via high thermal resistance capping layers in magnetic tunnel junctions
Enhanced electric control of magnetic anisotropy via high thermal resistance capping layers in magnetic tunnel junctions
复制标题
DOI：
10.1088/1361-648x/ab94f3
复制
发表时间：
2020-09-09
影响因子：
2.7
通讯作者：
Suzuki, Yoshishige
中科院分区：
文献类型：
--
作者：
Okuno, Ryota;Yamada, Yuma;Suzuki, Yoshishige
研究了具有不同热阻盖层的磁性隧道结(MTJ)直流偏压的非线性磁各向异性变化。研究发现，随着MTJs中氧化镁覆盖层厚度的增加(0.3-0.5 nm)，焦耳加热引起的磁各向异性变化增强，这表明FeB/MgO覆盖层界面的热阻增大。这种增强的界面热阻可能归因于FeB|MgO界面的粗糙度。此外，我们还观察到具有复合的MgO(0.3 nm)|W(2 Nm)|MgO(0.4 nm)盖层的MTJ具有更大的功率驱动磁各向异性变化3.21mJ W(-1)m(-1)。这项研究支持对自旋电子器件(如微波器件和磁存储器)进行高效自旋操纵的方法。
We studied nonlinear magnetic anisotropy changes to the DC bias voltage of magnetic tunnel junctions (MTJs) with capping layers of different thermal resistances. We found that increasing the thickness of MgO capping layers (in the range 0.3-0.5 nm) in MTJs enhances the Joule heating-induced magnetic anisotropy change, which indicates an enhancement of the interfacial thermal resistance at the FeB|MgO capping layer interface. This enhanced interfacial thermal resistance may be attributed to roughness at the FeB|MgO interface. Moreover, we observed a larger power-driven magnetic anisotropy change of 3.21 mu J W(-1)m(-1)in the MTJ with a composite MgO (0.3 nm)|W (2 nm)|MgO (0.4 nm) capping layer. This research supports methods of efficient spin manipulation of spintronic devices such as microwave devices and magnetic memories.