Modulation of the Anisotropic Electronic Properties in ReS2 via Ferroelectric Film
Modulation of the Anisotropic Electronic Properties in ReS2 via Ferroelectric Film
复制标题
通过铁电薄膜调制 ReS2 中的各向异性电子特性
DOI：
10.31635/ccschem.019.20180024
复制
发表时间：
2019-01-01
期刊：
影响因子：
11.2
通讯作者：
Zhai, Tianyou
中科院分区：
文献类型：
--
作者：
Wang, Renyan;Zhou, Fengya;Zhai, Tianyou
Anisotropic response in two-dimensional materials has emerged with attractive potential applications in angle-sensitive areas. However, the challenge with current studies on anisotropic response is due to the main use of the structural materials of pristine to examine the physical properties in different directions, which cause restriction of the anisotropic ratio within a narrow range, thereby, limiting their practical applications. Herein, we aimed at developing a novel strategy to effectively modulate the electronic anisotropic ratio by employing rhenium disulfide (ReS2) nanosheet in a nondestructive fashion. We integrated a thin film of ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) P(VDF-TrFE) on top of ReS2 nanosheet and modulated the conductivity of ReS2 within specific directions via selective polarization of the ferroelectric film. Our results demonstrated that the electronic anisotropic ratio was enhanced remarkably from the initial 1.4 to as high as similar to 12.0. Thus, we concluded that this strategy is compatible with conventional processes in the semiconductor industry and may pave the way for emerging angle-sensitive applications in the near future.[GRAPHICS].
