Schottky or Ohmic metal-semiconductor contact: influence on photocatalytic efficiency of Ag/ZnO and Pt/ZnO model systems.
Schottky or Ohmic metal-semiconductor contact: influence on photocatalytic efficiency of Ag/ZnO and Pt/ZnO model systems.
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DOI：
10.1002/cssc.201300818
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发表时间：
2014
期刊：
影响因子：
8.4
通讯作者：
Fengpo Yan;Yonghao Wang;Jiye Zhang;Zhang Lin;Jinsheng Zheng;F. Huang
中科院分区：
文献类型：
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作者：
Fengpo Yan;Yonghao Wang;Jiye Zhang;Zhang Lin;Jinsheng Zheng;F. Huang
研究了金属-半导体结的接触类型与其光催化效率的关系。两个金属-半导体结，银/氧化锌（Ag/ZnO）和铂/氧化锌（Pt/ZnO）分别作为欧姆和肖特基金属-半导体接触的模型系统。欧姆接触的Ag/ZnO比肖特基接触的Pt/ZnO具有更高的光催化效率。发现半导体内电场的方向在光生电荷的分离中起着至关重要的作用，从而强烈地影响光催化效率。
The relationship between the contact type in metal-semiconductor junctions and their photocatalytic efficiencies is investigated. Two metal-semiconductor junctions, silver on zinc oxide (Ag/ZnO) and platinum on zinc oxide (Pt/ZnO) serve as model system for Ohmic and Schottky metal-semiconductor contact, respectively. Ag/ZnO, with Ohmic contact, exhibits a higher photocatalytic efficiency than Pt/ZnO, with Schottky contact. The direction of electric fields within the semiconductor is found to play a crucial role in the separation of photogenerated charges, and thus strongly influences the photocatalytic efficiency.