Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells.
Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells.
复制标题
对称 InxGa1-xAs/GaAs 耦合量子阱中的直接和间接磁激子。
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
Eberl
中科院分区：
文献类型：
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作者：
Butov;Zrenner;Abstreiter;Petinova;Eberl
用光致发光和光致发光激发光谱研究了对称${mathrm{In}}_{mathit{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathit{x}}$As/GaAs耦合量子阱中的空间直接(井内)激子和间接(井间)激子，考察了零电场和高电场沿生长方向的变化以及它们之间的跃迁。磁场改变了单粒子对称-反对称分裂与激子结合能之比。研究发现，这对零电场和有限电场下光学跃迁的能量和振子强度都有很大的影响。在外加电场作用下，由于激子结合能的增加，磁场对激子的直接-间接跃迁有明显的修正作用。
Spatially direct (intrawell) and indirect (interwell) excitons in symmetric ${mathrm{In}}_{mathit{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathit{x}}$As/GaAs coupled quantum wells were studied by photoluminescence and photoluminescence excitation spectroscopy at magnetic fields Bensuremath{le}14 T. The regimes of zero and high electric fields in the growth direction as well as the transition between them were examined. The magnetic field changes the ratio between the one-particle symmetric-antisymmetric splittings and the exciton binding energies. This was found to result in a strong influence on the energies and oscillator strengths of the optical transitions both at zero and finite electric fields. The direct-indirect exciton crossover under applied electric field was found to be markedly modified by the magnetic field due to the increase of the exciton binding energy.