Evolution of Deep Level Centers in NPN Transistors Following 35 MeV Si Ion Irradiations With High Fluence
Evolution of Deep Level Centers in NPN Transistors Following 35 MeV Si Ion Irradiations With High Fluence
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DOI：
10.1109/tns.2013.2292691
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发表时间：
2014-01
影响因子：
1.8
通讯作者：
Xingji Li;Chaoming Liu;Jianqun Yang;J. Bollmann
中科院分区：
文献类型：
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作者：
Xingji Li;Chaoming Liu;Jianqun Yang;J. Bollmann
研究了3DG110硅NPN双极晶体管（BJTs）基极集电极结在35mev不同浓度硅离子辐照下的深能级中心特性。Gummel曲线用来描述给定流量下电流增益的衰减。35 MeV高通量Si离子对3DG110 BJTs电流增益的破坏程度高，其值可小于1。深能级瞬态光谱（deep level transient spectroscopy， DLTS）表征了NPN BJTs中由高通量诱导的深能级中心的演化。利用SRIM软件估计了35 MeV Si离子产生的空位数量，并计算了bjt中Si离子的范围端。根据SRIM的计算和DLTS的测量，当辐照通量足够高时，35 MeV Si离子也能产生明显的缺陷团簇，其末端深度大于dlt探测深度，与dlt探测深度的末端缺陷团簇相似。这些辐照诱导的缺陷簇可以抑制V2(=/-) DLTS特征。特别是，与较浅的深电平相比，较深的电平，如V2（-/0）中心，是降低电流增益的关键缺陷。
The properties of deep level centers have been researched on the base-collector junctions of 3DG110 silicon NPN bipolar junction transistors (BJTs) irradiated by 35 MeV silicon (Si) ions with different fluence. The Gummel curve is utilized to characterize the degradation of current gain at a given fluence. 35 MeV Si ions with high fluence can induce high levels of damage on current gain of 3DG110 BJTs, the value of which could be less than 1. Evolution of deep level centers, induced by such high fluence in NPN BJTs, is characterized by the deep level transient spectroscopy (DLTS). SRIM software is employed to estimate the number of vacancies produced by 35 MeV Si ions and to calculate the Si ion end of range in BJTs. Based on the calculations by SRIM and measurements by DLTS, when the irradiation fluence is high enough, 35 MeV Si ions with the end of range deeper than the DLTS-probed depths, can also produce apparent defect clusters, which is similar to those with the end of range in DLTS-probed depths. These irradiation-induced defect clusters can suppress the V2(=/-) DLTS signature. Especially, compared to shallower deep levels, the deeper levels, such as V2(-/0) centers, are the critical defects to degrade the current gain.