Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy
Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy
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气源分子束外延生长的 GaInNAs/GaAs 量子阱中 GaInNAs 的量子点行为
DOI：
10.1116/1.590804
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发表时间：
1999
影响因子：
1.4
通讯作者：
C. Tu
中科院分区：
文献类型：
--
作者：
H. Xin;K. Kavanagh;Ziqiang Zhu;C. Tu
利用高分辨X射线摇摆曲线（XRC）、截面透射电子显微镜（XTEM）和光致发光（PL）谱研究了气体源分子束外延生长的Ga0.7In0.3NxAs1−x/GaAs量子威尔斯阱（QW）中GaInNAs的类量子点行为。XRC确定的QW的平均合金成分和厚度分别为In 0.30和N 0-0.030，和6.2 nm。XTEM图像表明，Ga_（0.7）In_（0.3）As/GaAs和Ga_（0.7）In_（0.3）N_（0.02）As_（0.98）/GaAs的威尔斯阱都是起伏的，应变的横向变化使阱面变得粗糙。对于Ga0.7In0.3As/GaAs量子阱，快速热退火导致宽激子发射分裂成两个峰，推测是由于In组分波动。这两个峰之间的分离随着N浓度的增加而增加。随着激发强度的增加，低能峰发生明显的蓝移，而高能峰几乎没有蓝移。早期的PL行为可以解释为...
A quantum dot-like behavior of GaInNAs in Ga0.7In0.3NxAs1−x/GaAs quantum wells (QWs) grown by gas-source molecular-beam epitaxy has been studied using high-resolution x-ray rocking curves (XRC), cross-sectional transmission electron microscopy (XTEM), and photoluminescence (PL) spectroscopy. XRC determines the average alloy composition and thickness of the QWs to be In 0.30 and N 0–0.030, and 6.2 nm, respectively. XTEM images show that the wells of both Ga0.7In0.3As/GaAs and Ga0.7In0.3N0.02As0.98/GaAs are undulated with lateral variations in strain, but the latter is much rougher. For Ga0.7In0.3As/GaAs QWs, rapid thermal annealing results in the splitting of a broad excitonic emission into two peaks presumably due to In composition fluctuation. The separation between these two peaks increases with increasing N concentration. Increasing excitation intensity results in a significant blueshift for the low-energy peak, while little blueshift for the high-energy peak. The earlier PL behavior can be interpreted...
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y