Focused ion beam gallium implantation into silicon
Focused ion beam gallium implantation into silicon
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聚焦离子束镓注入硅
DOI：
10.1007/bf00620733
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
M. Default
中科院分区：
文献类型：
--
作者：
Masao Tamura;S. Shukuri;M. Moniwa;M. Default
研究了50 keV聚焦离子束（FIB）镓注入硅层的电学性质和晶格紊乱与离子束扫描速度和离子剂量的关系。当光束扫描速度降至约10−2 cm/s时，连续非晶层形成的临界剂量为8 ~ 10 × 1013离子/cm2。这大约是传统离子注入的1/3。在接近临界剂量的注入条件下，随着束流扫描速度的降低，退火后二次缺陷的形成也增加。然而，高剂量率对镓原子电活化和临界剂量降低的影响不如用较轻的离子质量（如硼）注入FIB那么显著。并与常规离子注入的结果进行了比较。
The electrical properties and lattice disorders of 50 keV, focused ion beam (FIB) gallium-implanted silicon layers have been investigated as a function of beam scan speed and ion dose. The critical dose for continuous amorphous layer formation is 8 ∼ 10 × 1013 ions/cm2, when the beam scan speed is lowered to about 10−2 cm/s. This is about 1/3 that of conventional ion implantation. The increase in secondary defect formation after annealing is also observed as the beam scan speed decreases under implantation conditions close to the critical dose. However, the effect of high dose rate on the electrical activation of gallium atoms and critical dose reduction is not as significant as with FIB implantation by a lighter ion mass, such as boron. The results are compared with those obtained by conventional ion implantation.