Study of the characteristics of 1.55μm quantum dash/dot semiconductor lasers on InP substrate
Study of the characteristics of 1.55μm quantum dash/dot semiconductor lasers on InP substrate
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DOI：
10.1063/1.3005194
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发表时间：
2008-10
影响因子：
4
通讯作者：
Dayong Zhou;R. Piron;F. Grillot;O. Dehaese;E. Homeyer;M. Dontabactouny;T. Batte;K. Tavernier;J. Even;S. Loualiche
中科院分区：
文献类型：
--
作者：
Dayong Zhou;R. Piron;F. Grillot;O. Dehaese;E. Homeyer;M. Dontabactouny;T. Batte;K. Tavernier;J. Even;S. Loualiche
InAs quantum dash (QDH) and quantum dot (QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The laser active zones with multiple stacked layers exhibit lasing wavelength at 1.55μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties such as gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD lasers shows a promising potential for improvement.
