Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings
Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings
复制标题
II 型 GaSb/GaAs 量子环的室温电致发光
DOI：
--
复制
发表时间：
2012
影响因子：
2.6
通讯作者：
Shih
中科院分区：
文献类型：
--
作者：
Wei;Meng;S. Wu;Shih
本文研究了Sb/背景As通量比对GaSb纳米结构的影响。在浸渍后的高Sb照射下，随着Sb/背景As通量比的降低，观察到环的形成、光致发光（PL）强度增强和PL峰红移。随着Sb通量和Sb/背景As比值的进一步降低，与量子点相比，量子环（QR）样品的PL强度更强，这表明电子-空穴波函数有更多的重叠。通过对QR PIN二极管室温电致发光的观察，揭示了纳米结构在发光器件中的应用潜力。
The influence of Sb/background As flux ratios on GaSb nano-structures is investigated in this letter. With decreasing Sb/background As flux ratios under high Sb irradiation during the post soaking procedure, ring formation, photoluminescence (PL) intensity enhancement, and PL peak red shift are observed. With further reduced Sb flux and Sb/background As ratios, the observed more intense PL intensities of the quantum-ring (QR) samples compared with quantum dots suggest that more electron-hole wave function overlapping is obtained. The observation of room-temperature electro-luminescence of a QR PIN diode has revealed the potential of the nano-structure in light-emitting device application.