A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation
A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation
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用于低压超快存储器和传感操作的半浮栅晶体管
DOI：
10.1126/science.124096
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发表时间：
2013-08-09
期刊：
影响因子：
56.9
通讯作者：
Zhang, David Wei
中科院分区：
文献类型：
--
作者：
Wang, Peng-Fei;Lin, Xi;Zhang, David Wei
随着集成电路的半导体器件接近缩放的物理限制，需要替代的晶体管和存储器设计来实现速度、密度和功耗的改进。我们报告的晶体管，使用嵌入式隧穿场效应晶体管的充电和放电的半浮栅。该晶体管工作在低电压（
As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate. This transistor operates at low voltages (