Enhancement of Seebeck Coefficient in Bi Nanowires by Electric Field Effect.
Enhancement of Seebeck Coefficient in Bi Nanowires by Electric Field Effect.
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通过电场效应增强 Bi 纳米线的塞贝克系数。
DOI：
10.1007/s11664-015-4113-x
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
and Yasuhiro Hasegawa
中科院分区：
文献类型：
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作者：
Takashi Komine;Tomosuke Aono;Yuta Nabatame;Masayuki Murata;and Yasuhiro Hasegawa
在这项研究中，我们研究了电场对Bi纳米线的输运性质的影响。这些影响是由一个表面电位建模。利用有效质量方程，考虑外电场作用下的表面电势，数值分析了Bi纳米线在T点和L点的电子态。利用具有常数弛豫时间的Boltzmann方程计算了Bi纳米线的Seebeck系数。结果发现，塞贝克系数增加时，表面势参数的符号是负的。特别地，在直径为20 nm的纳米线中，当表面电势参数为1 eV且趋肤深度为10 nm时，塞贝克系数的最大绝对值大于1 mV/K，这与没有外部电场的情况相比大大提高。
In this study, we investigated the electric field effect on the transport properties of a Bi nanowire. These effects were modeled by a surface potential. The electron states of Bi nanowires were numerically analyzed by effective mass equations at the T-point and L-point taking into account surface potential due to an external electric field. The Seebeck coefficients of Bi nanowires were calculated by using the Boltzmann equation with a constant relaxation time. It was found that the Seebeck coefficients increased when the sign of the surface potential parameter was negative. In particular, when the surface potential parameter was1 eV and the skin depth was 10 nm in a 20-nm-diameter nanowire, the maximum absolute value of the Seebeck coefficient was larger than 1 mV/K, which was greatly improved compared to that without an external electric field.