A Compact and High-Linearity 140-160 GHz Active Phase Shifter in 55 nm BiCMOS
A Compact and High-Linearity 140-160 GHz Active Phase Shifter in 55 nm BiCMOS
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DOI：
10.1109/lmwc.2020.3037162
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发表时间：
2021-02-01
影响因子：
3
通讯作者：
Sevillano, Juan Francisco
中科院分区：
文献类型：
--
作者：
del Rio, David;Gurutzeaga, Inaki;Sevillano, Juan Francisco
本文介绍了一种集成在55 nm BiCMOS工艺中的140-160 GHz矢量调制器型移相器的设计。该电路经过优化，最大限度地减小了占用面积，最大化了线性度，便于在D波段相控阵中集成。测试结果表明，平均插入损耗为4.5分贝，运算1分贝为-3.7 dBm，均方根幅相误差分别小于1.4分贝和7.5度。该电路的核心面积为0.05 mm(2)，直流功耗小于66 mW。
This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average insertion loss of 4.5 dB, an OP 1 dB of -3.7 dBm, and rms gain/phase errors lower than 1.4 dB and 7.5 degrees. The circuit core occupies 0.05 mm(2), consuming less than 66 mW of dc power.