Nanometer‐designed Al/SiC periodic multilayers: characterization by a multi‐technique approach
Nanometer‐designed Al/SiC periodic multilayers: characterization by a multi‐technique approach
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DOI：
10.1002/sia.3393
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发表时间：
2010-06
影响因子：
1.7
通讯作者：
A. Galtayries;M. Hu;K. Guen;J. Andre;P. Jonnard;E. Meltchakov;C. Hecquet;F. Delmotte
中科院分区：
文献类型：
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作者：
A. Galtayries;M. Hu;K. Guen;J. Andre;P. Jonnard;E. Meltchakov;C. Hecquet;F. Delmotte
纳米厚的Al/SiC周期性多层膜，专为极紫外（EUV）范围设计，已经通过专用于这种薄多层膜（每个厚度在4和10 nm之间）的不同技术进行了表征。为了减小膜的粗糙度，提高膜的光学性能，还引入了一层厚约2nm的难熔金属层，从而形成了Al/W/SiC和Al/Mo/SiC三层周期多层膜系统。
Nanometer‐thick Al/SiC periodic multilayers, designed for the Extreme Ultra Violet (EUV) range, have been characterized by different techniques dedicated to such thin multilayers (each between 4 and 10 nm thick). In order to decrease the roughness and to improve the optical performances of the stacks, an ultrathin (2 nm) refractory metal layer has also been introduced, thus making Al/W/SiC and Al/Mo/SiC multilayer systems with three layers in period.