Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input
Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input
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带有磁场输入的非易失性GeTe/Sb2Te3超晶格相变存储器实现的逻辑门
DOI：
10.1063/1.4958708
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发表时间：
2016-07-11
影响因子：
4
通讯作者：
Miao, Xiangshui
中科院分区：
文献类型：
--
作者：
Lu, Bin;Cheng, Xiaomin;Miao, Xiangshui
能够同时实现存储和计算功能的非易失性存储器件或电路是现代计算机效率提高的重要要求。在这项工作中，我们实现了逻辑功能，通过使用[GeTe/Sb 2 Te 3]n超晶格相变存储器（PCM）的单元，其中需要较高的阈值电压与磁场的应用相变化。首先，制备了[GeTe/Sb_2Te_3]_n超晶格晶胞，并测量了其R-V曲线。在此基础上，设计了基于超晶格PCM单元的逻辑电路，并通过HSPICE仿真和实验验证了设计的正确性。本文首先介绍了七种基本的逻辑功能，然后介绍了几种多输入逻辑门。所提出的逻辑器件具有结构简单、功耗低等优点，表明超晶格PCM在未来非易失性中央处理器设计中具有潜力，有利于大规模并行计算体系结构的发展。
Nonvolatile memory devices or circuits that can implement both storage and calculation are a crucial requirement for the efficiency improvement of modern computer. In this work, we realize logic functions by using [GeTe/Sb2Te3]n super lattice phase change memory (PCM) cell in which higher threshold voltage is needed for phase change with a magnetic field applied. First, the [GeTe/Sb2Te3]n super lattice cells were fabricated and the R-V curve was measured. Then we designed the logic circuits with the super lattice PCM cell verified by HSPICE simulation and experiments. Seven basic logic functions are first demonstrated in this letter; then several multi-input logic gates are presented. The proposed logic devices offer the advantages of simple structures and low power consumption, indicating that the super lattice PCM has the potential in the future nonvolatile central processing unit design, facilitating the development of massive parallel computing architecture.