Tunable Electrical Conductivity of Individual Graphene Oxide Sheets Reduced at "Low" Temperatures
Tunable Electrical Conductivity of Individual Graphene Oxide Sheets Reduced at "Low" Temperatures
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DOI：
10.1021/nl8019938
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发表时间：
2008-12-01
期刊：
影响因子：
10.8
通讯作者：
Ruoff, Rodney S.
中科院分区：
文献类型：
--
作者：
Jung, Inhwa;Dikin, Dmitriy A.;Ruoff, Rodney S.
在低温（125-240 摄氏度）下对单个氧化石墨烯片进行逐步可控热还原，并将其纳入多端子场效应器件中，并同时进行电测量。一旦达到第一个可测量电阻，就会观察到对称无滞后双极（电子和空穴型）栅极依赖性。每个制造的器件的电导率取决于还原水平（随着还原的进行，增加了 106 倍以上）、外部电场的强度、传输电流的密度和温度。
Step-by-step controllable thermal reduction of individual graphene oxide sheets, incorporated into multiterminal field effect devices, was carried out at low temperatures (125-240 degrees C) with simultaneous electrical measurements. Symmetric hysteresis-free ambipolar (electron- and hole-type) gate dependences were observed as soon as the first measurable resistance was reached. The conductivity of each of the fabricated devices depended on the level of reduction (was increased more than 106 times as reduction progressed), strength of the external electrical field, density of the transport current, and temperature.