Einstein–de Haas effect in a NiFe film deposited on a microcantilever
Einstein–de Haas effect in a NiFe film deposited on a microcantilever
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微悬臂梁上沉积的 NiFe 薄膜中的爱因斯坦-德哈斯效应
DOI：
10.1063/1.2355445
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发表时间：
2006
影响因子：
4
通讯作者：
P. Kabos
中科院分区：
文献类型：
--
作者：
T. M. Wallis;J. Moreland;P. Kabos
本文提出了一种通过测量Einstein-de哈斯效应来确定微悬臂梁上铁磁薄膜的磁力比g′的方法。施加在悬臂梁的平面中并垂直于其长度的交变磁场引起悬臂梁的弯曲振荡，所述弯曲振荡用光纤干涉仪测量。g′的测量提供了铁磁薄膜中g因子的补充信息，这是其他表征技术无法直接获得的。对于沉积在氮化硅悬臂梁上的50 nm Ni_（80）Fe_（20）薄膜，测得g′为1.83±0.10。
A method is presented for determining the magnetomechanical ratio g′ in a thin ferromagnetic film deposited on a microcantilever via measurement of the Einstein–de Haas effect. An alternating magnetic field applied in the plane of the cantilever and perpendicular to its length induces bending oscillations of the cantilever that are measured with a fiber optic interferometer. Measurement of g′ provides complementary information about the g factor in ferromagnetic films that is not directly available from other characterization techniques. For a 50nm Ni80Fe20 film deposited on a silicon nitride cantilever, g′ is measured to be 1.83±0.10.