Semiconductor X-Ray Detectors
Semiconductor X-Ray Detectors
复制标题
半导体 X 射线探测器
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
R. Sareen
中科院分区：
文献类型：
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作者：
R. Sareen
特征X射线的检测是一个迷人且具有挑战性的课题。从早期的气体正比计数器开始，它像许多技术分支一样发展到使用各种半导体。锂补偿硅探测器[Si（Li）]在过去二十年中一直是主要的测量工具，在过去五年中，出现了越来越多的高纯锗探测器（HPG），最近大量的新材料和概念正在成功引入。这些新材料包括化合物半导体，如碘化汞、碲化镉、碲锌镉、砷化镓、碘化铅、磷化铟和金刚石。新概念包括测辐射热计、过渡边缘探测器、漂移探测器、PIN二极管、CCD阵列和PN CCD阵列。
Detection of characteristic x-rays is a fascinating and challenging subject. From its early beginnings with gas proportional counters it has evolved, like many branches of technology, into the use of a variety of semiconductors. The lithium compensated silicon detector [Si(Li)] has been the predominant measuring tool over the last two decades, in the last five years, increasing numbers of high purity germanium detectors (HPG) have appeared and more recently a plethora of new materials and concepts are seeing a successful introduction. Among these newer materials are compound semiconductors like mercuric iodide, cadmium telluride, cadmium zinc telluride, gallium arsenide, lead iodide, indium phosphide and diamond. Among the new concepts are Bolometers, Transition Edge Detectors, Drift Detectors, PIN Diodes, CCD arrays and PN CCD arrays.