Decrease in gap states at ultrathin SiO2/Si interfaces by crown-ether cyanide treatment
Decrease in gap states at ultrathin SiO2/Si interfaces by crown-ether cyanide treatment
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通过冠醚氰化物处理减少超薄 SiO2/Si 界面的能隙态
DOI：
10.1063/1.1332982
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发表时间：
2000
影响因子：
4
通讯作者：
Y. Todokoro
中科院分区：
文献类型：
--
作者：
H. Kobayashi;Akira Asano;Masao Takahashi;K. Yoneda;Y. Todokoro
提出了一种钝化SiO_2/Si界面态的简单方法。在该方法中，将SiO2包覆的Si浸入含有冠醚的KCN溶液中，然后在25 °C的水中冲洗。 电导-电压测量结果表明，这种冠醚氰化物处理使界面态密度降低到1/10。电容-电压测量结果表明，冠醚的引入有效地避免了K+离子的污染。这些结果表明冠醚分子有效地捕获K+离子，因此CN−离子可以有效地与缺陷态反应，可能形成Si-CN键。氰化物处理对界面态的钝化改善了金属氧化物半导体隧穿二极管的电学特性。
A simple method to passivate interface states at ultrathin SiO2/Si interfaces is developed. In this method, ultrathin SiO2-covered Si is immersed in a KCN solution containing crown-ether, followed by a rinse in water at 25 °C. The conductance–voltage measurements show that the interface state density is decreased to ∼1/10 by this crown-ether cyanide treatment. The capacitance–voltage measurements show that contamination by K+ ions is effectively avoided by the inclusion of crown-ether. These results demonstrate that crown-ether molecules effectively capture K+ ions and consequently CN− ions effectively may react with defect states, probably forming Si–CN bonds. The passivation of interface states by the cyanide treatment improves the electrical characteristics of metal–oxide–semiconductor tunneling diodes.