Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens
Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens
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DOI：
10.1063/1.3567759
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发表时间：
2011-03
影响因子：
4
通讯作者：
S. H. Pan;D. Recht;S. Charnvanichborikarn;James S. Williams;M. Aziz
中科院分区：
文献类型：
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作者：
S. H. Pan;D. Recht;S. Charnvanichborikarn;James S. Williams;M. Aziz
我们发现，硫 (S)、硒 (Se) 或碲 (Te) 过饱和的单晶硅对 400 至 1600 nm 波长的光具有显着增强的吸收系数。通过离子注入和纳秒脉冲激光熔化在绝缘体硅片上制备合金。吸收系数的测量是通过独立薄膜的直接传输和光谱椭圆光度法进行的。
We show that single-crystal silicon supersaturated with sulfur (S), selenium (Se), or tellurium (Te) displays a substantially enhanced absorption coefficient for light with wavelengths of 400 to 1600 nm. Alloys were prepared in silicon on insulator wafers by ion implantation followed by nanosecond pulsed laser melting. Measurements of the absorption coefficient were made by direct transmission through freestanding thin films and by spectroscopic ellipsometry.