Nanoelectronic pulse generators based on gated resonant tunnelling diodes
Nanoelectronic pulse generators based on gated resonant tunnelling diodes
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基于门控谐振隧道二极管的纳米电子脉冲发生器
DOI：
10.1002/cta.290
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发表时间：
2004
影响因子：
2.3
通讯作者：
E. Lind
中科院分区：
文献类型：
--
作者：
L. Wernersson;Peter Lindström;A. Nauen;E. Lind
我们研究了放置在振荡器储能电路中的门控谐振隧道二极管的操作，以用作脉冲发生器。门控二极管是通过距离谐振隧道双势垒异质结构30nm放置的金属栅极实现的，其中栅极用于控制隧道二极管的电流。为门控谐振隧道二极管开发了大信号模型，我们使用该模型来研究脉冲振荡器的操作。事实证明，栅极可用于打开和关闭振荡，并通过门控二极管内部电容的变化来调整振荡频率。当栅极偏压从0.2V变化到-0.6V时，获得了在220GHz附近7.6GHz振荡频率的调制。施加到栅极的短脉冲仅产生四个具有宽功率谱的振荡周期。版权所有 © 2004 约翰·威利父子有限公司
We study the operation of a gated resonant tunnel diode placed in an oscillator tank circuit for application as a pulse generator. The gated diode is realized by a metal gate placed 30nm away from a resonant tunnelling double barrier heterostructure, where the gate is used to control the current of the tunnelling diode. A large signal model is developed for the gated resonant tunnelling diode and we use this model to study the operation of the pulsed oscillator. It is demonstrated that the gate can be used to switch the oscillations on and off and to tune the oscillation frequency via changes in the internal capacitances in the gated diode. A modulation in the oscillation frequency of 7.6 GHz around 220 GHz is obtained for a change in the gate bias from 0.2 to −0.6V. Short pulses applied to the gate results in only four periods of oscillation with a broad power spectrum. Copyright © 2004 John Wiley & Sons, Ltd.