Sputtering of Cu in a high pressure atmosphere
Sputtering of Cu in a high pressure atmosphere
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高压气氛下的Cu溅射
DOI：
10.1016/0169-4332(88)90423-0
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发表时间：
1988
影响因子：
6.7
通讯作者：
H. Terauchi
中科院分区：
文献类型：
--
作者：
K. Ishii;S. Handa;H. Terauchi
采用气流溅射法，溅射原子通过Ar气流从靶向基片移动，在高压（> 0.5Torr）气氛下获得了高的Cu膜沉积速率。在Ar气压下，溅射的原子具有高的初始能量，失去了所有的能量到达衬底之前的热化。用这种溅射方法从热化蒸汽中制备了Cu薄膜，并研究了衬底偏压对薄膜结构的影响。
The gas-flow-sputtering method, in which sputtered atoms were carried from the target to the substrate by Ar gas flow, gave a high deposition rate of Cu films in a high pressure (>0.5 Torr) atmosphere. At the Ar pressures investigated, the sputtered atoms with high initial energies lost all their energy by thermalization before arriving at the substrate. The structures of Cu films formed from the thermalized vapor by this sputtering were examined and the effects of substrate bias on the structure were investigated.