Epitaxial Growth of Ni-Based Superalloys Using Laser and Spark Deposition
Epitaxial Growth of Ni-Based Superalloys Using Laser and Spark Deposition
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DOI：
10.4028/www.scientific.net/amr.418-420.1564
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发表时间：
2011-12
期刊：
影响因子：
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通讯作者：
E. Costa Santos;K. Kida;J. Rozwadowska;M. Kidera;C. Chen
中科院分区：
文献类型：
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作者：
E. Costa Santos;K. Kida;J. Rozwadowska;M. Kidera;C. Chen
本文采用电火花沉积和激光粉末沉积两种方法实现了镍基单晶的外延生长。使用不同的Ni基衬底，如CMSX-4，TMS 138 A以及沉积材料：NiCrAl，Rene N4和改性的第4.5代单晶合金。通过激光共聚焦显微镜、FEG-SEM、X射线和电子背散射衍射（EBSD）分析沉积层，其具有非常小的稀释，并且对于使用Rene N4电极制备的沉积物确认了外延生长。在100 V电压、850 W功率和110 Hz频率下的沉积时间为3 min，层厚度从0.3 mm变化到0.5 mm。在某些区域观察到裂纹并形成杂散晶粒。为了研究激光加工在多层堆积过程中的影响，制造了具有一层和十层的试样。基材上的总层厚度分别为0.3 mm和2 mm。加工参数为：激光功率为500 W，激光束直径为0.6 mm，z位移等于层高度的80%。激光沉积还导致成功的外延生长和最小的缺陷（孔隙或裂纹），然而，包层呈现高稀释。
In this paper, epitaxial growth on Ni-based single crystals was achieved by using spark deposition and laser powder deposition. Different Ni-based substrates, such as CMSX-4, TMS 138A as well as deposition materials: NiCrAl, Rene N4 and modified 4.5th generation single crystal alloys were used. The deposited layers were analysed by laser confocal microscopy, FEG-SEM, X-ray and electron backscatter diffraction (EBSD), had very little dilution and epitaxial growth was confirmed for the deposits made using Rene N4 electrodes. The deposition time at 100 V voltage, 850 W power and 110 Hz frequency was 3min and the layer thickness varied from 0.3 to 0.5 mm. Cracks were observed in certain areas with the formation of stray grains. In order to investigate the influence of the laser processing during multiple build up, specimens with one and ten layers were manufactured. The total layer thickness on substrates was 0.3 mm and 2 mm, respectively. The processing parameters were: laser power of 500 W, laser beam diameter of 0.6 mm and the z displacement was equal to 80% of the layer height. The laser deposition also resulted in successful epitaxial growth and minimal defects (pores or cracks), however the clads presented high dilution.