The effect of STM parameters on tip-enhanced Raman spectra.

The effect of STM parameters on tip-enhanced Raman spectra.
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DOI:
10.1039/c7fd00164a
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发表时间:
2017-11
影响因子:
3.4
通讯作者:
N. M. Sabanés;A. Elizabeth;J. Pfisterer;Katrin F. Domke
N. M. Sabanés;A. Elizabeth;J. Pfisterer;Katrin F. Domke
中科院分区:
化学2区
文献类型:
--
作者:
N. M. Sabanés;A. Elizabeth;J. Pfisterer;Katrin F. Domke

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在这项工作中,我们评估了在Au(111)电极上单层噻吩的尖端增强拉曼(TER)光谱对扫描隧道显微镜的隧道电流设定点和偏置电压参数的依赖关系。我们发现,当设定点增加或偏差减少时,TER强度会增加,这与间隙距离减少所期望的一样。所得到的关系遵循一个理论模型,在调整上述参数时考虑了简单的间隙距离变化。我们发现偏置电压的值比电流设定值对TER强度的影响更大。因此,当目标是超灵敏的TER测量时,建议在低偏置状态下工作。
In this work, we evaluate the dependence of tip-enhanced Raman (TER) spectra of a monolayer of thiophenol at a Au(111) electrode on the scanning tunneling microscope's tunneling current set-point and bias voltage parameters. We find an increase of the TER intensity upon set-point increase or bias decrease as expected from a gap-distance reduction. The relations obtained follow a theoretical model considering a simple gap-distance change when tuning the mentioned parameters. We find that the value of the bias voltage affects the TER intensity to a larger extent than the current set-point. Therefore it is advisable to work in a low-bias regime when aiming for ultrasensitive TER measurements.