Abundant photoelectronic behaviors of La 0.67 Sr 0.33 MnO 3 /Nb:SrTiO 3 junctions
Abundant photoelectronic behaviors of La 0.67 Sr 0.33 MnO 3 /Nb:SrTiO 3 junctions
复制标题
DOI:
10.1088/1674-1056/26/7/077302
复制
发表时间:
2017-06
影响因子:
1.7
通讯作者:
Hailin Huang;Denghong Wang;Hongrui Zhang;Hui Zhang;C. Xiong;Jirong Sun;B. Shen
中科院分区:
文献类型:
--
作者:
Hailin Huang;Denghong Wang;Hongrui Zhang;Hui Zhang;C. Xiong;Jirong Sun;B. Shen
Temperature dependence on rectifying and photoelectronic properties of La0.67Sr0.33MnO3/Nb:SrTiO3 (LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.