GaN-based ultraviolet microdisk laser diode grown on Si
GaN-based ultraviolet microdisk laser diode grown on Si
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Si 上生长的 GaN 基紫外微盘激光二极管
DOI：
10.1364/prj.7.000b32
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发表时间：
2019
影响因子：
7.6
通讯作者：
Yang Hui
中科院分区：
文献类型：
--
作者：
Wang Jin;Feng Meixin;Zhou Rui;Sun Qian;Liu Jianxun;Huang Yingnan;Zhou Yu;Gao Hongwei;Zheng Xinhe;Ikeda Masao;Yang Hui
报道了电注入GaN基近紫外微盘激光二极管的实验研究，室温下激光波长为386.3 nm。使用Al成分的降级AlN/AlGaN多层缓冲层在Si衬底上外延生长无裂纹激光器结构，以减轻晶格常数和热膨胀系数的不匹配，并加工成半径为12 μm的“三明治状”微盘结构。成功地制造了空气桥电极，以实现器件的电气特性。当电流超过阈值248 mA时，电致发光光谱迅速变窄，光输出功率急剧增加，证明了所制备的微盘激光二极管的电泵浦激射。
This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3 nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded AlN/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into “sandwich-like” microdisk structures with a radius of 12 μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248 mA.