D.Lee et al.: "Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_<1-x-y>Ge_xC_y on Si(100) by Ultraclean LPCVD"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 270-2
D.Lee et al.: "Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_<1-x-y>Ge_xC_y on Si(100) by Ultraclean LPCVD"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 270-2
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D.Lee 等人：“超洁净 LPCVD 在 Si(100) 上的杂质掺杂 Si_<1-x-y>Ge_xC_y 的外延生长和电特性”应用于 ULSI 技术的选择性和功能薄膜沉积技术研讨会（第 29 届 IUVSTA 研讨会）
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