Investigation of Noise Spectrum and Radiated EMI in High Switching Frequency Flyback Converters
Investigation of Noise Spectrum and Radiated EMI in High Switching Frequency Flyback Converters
复制标题
高开关频率反激式转换器中的噪声频谱和辐射 EMI 的研究
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
Shuo Wang
中科院分区：
文献类型：
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作者：
Juntao Yao;Yanwen Lai;Zhedong Ma;Shuo Wang
研究了基于氮化镓（GaN）集成电路（IC）的高频有源箝位反激（ACF）变换器的噪声频谱和辐射电磁干扰。研究了开关频率、dv/dt、波形对称性、电压幅值、占空比等因素对噪声频谱的影响，分析了辐射EMI频段内频谱谷值与dv/dt的关系。在所研究的GaN IC基ACF中，分析和实验研究了高线路输入电压和低线路输入电压下的电压谱和辐射EMI。
This paper investigates noise spectrums and radiated EMI in high-frequency gallium nitride (GaN) integrated circuit (IC)-based active clamp flyback (ACF) converters. Influential factors for the noise spectrums are investigated, including the switching frequency, dv/dt and waveform symmetry, voltage magnitude, duty cycle, etc. Moreover, in the radiated EMI frequency range, the relationship between spectrum valleys and dv/dt is analyzed. In the investigated GaN IC-based ACF, the voltage spectrums and radiated EMI with high line and low line input voltages are analyzed and investigated experimentally.