Structure–conductivity correlation in ferric chloride-doped poly(3-hexylthiophene)
Structure–conductivity correlation in ferric chloride-doped poly(3-hexylthiophene)
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DOI：
10.1088/1367-2630/8/7/112
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发表时间：
2006-07
影响因子：
3.3
通讯作者：
R. Singh;J. Kumar;Ramadhar Singh;R. Kant;R. C. Rastogi;S. Chand;Vikram Kumar
中科院分区：
文献类型：
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作者：
R. Singh;J. Kumar;Ramadhar Singh;R. Kant;R. C. Rastogi;S. Chand;Vikram Kumar
聚(3-己基噻吩) (P3HT) 基质通过不同摩尔浓度的氯化铁 (FeCl3) 进行化学掺杂（氧化还原掺杂），得到 P3HT-FeCl3 电荷转移复合物。研究了氧化还原掺杂对 P3HT 基质的光物理、结构和形态特性以及直流电导率的影响。在 6-300 K 的温度范围内测量了原始 P3HT 和 P3HT-FeCl3 电荷转移络合物薄膜的直流电导率。对直流电导率数据的分析表明，在 40-300 K 的温度范围内，直流电导率主要受 Mott 的 3 维可变范围跳跃 (3D-VRH) 控制；然而，低于 40 K 的隧道似乎占主导地位。随着掺杂水平的增加或精确地随着 P3HT-FeCl3 电荷转移络合物程度的增加，观察到从 3D-VRH 到 1D-VRH 的轻微偏差。我们将这种偏差归因于 X 射线衍射数据揭示的晶格诱导膨胀以及原子力显微镜成像观察到的离散导电域的形成。
Poly(3-hexylthiophene) (P3HT) matrix has been chemically doped (redox doping) by ferric chloride (FeCl3) with different molar concentrations to get P3HT–FeCl3 charge-transfer complexes. The effect of redox doping on photo-physical, structural, and morphological properties and dc electrical conductivity of P3HT matrices has been examined. The dc conductivity has been measured on films of pristine P3HT and P3HT–FeCl3 charge-transfer complexes in the temperature range 6–300 K. Analysis of dc conductivity data reveals that in the temperature range 40–300 K, the dc conductivity is predominantly governed by Mott's 3-dimensional variable range hopping (3D-VRH); however, below 40 K tunnelling seems to dominate. A slight deviation from 3D-VRH to 1D-VRH is observed with an increase in doping level or precisely with an increase in the extent of P3HT–FeCl3 charge-transfer complexes. We attribute this deviation to the induced expansion in crystallographic lattices as revealed by x-ray diffraction data and formation of discrete conducting domains as observed by atomic force microscope imaging.