Hall effect in charged conducting ferroelectric domain walls.
Hall effect in charged conducting ferroelectric domain walls.
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DOI：
10.1038/ncomms13764
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发表时间：
2016-12-12
影响因子：
16.6
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中科院分区：
文献类型：
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铁电体在特定畴壁处的导电性增强是一种公认的现象。然而，令人惊讶的是，人们对传导的最基本方面知之甚少。载体类型、密度和流动性尚未确定，运输机制仍是猜测问题。本文证明了间歇接触原子力显微镜（AFM）可以检测到导电畴壁中的霍尔效应。通过对YbMnO3单晶的研究，我们证实了p型导电发生在尾对尾带电畴壁上。通过校准AFM信号，计算出壁上移动载流子密度的上估值为~ 1 × 1016 cm−3，比完全筛选极性不连续所需的密度低约4个数量级。计算出载流子迁移率为~ 50 cm2V−1s−1，大约比p型硅中的等效载流子迁移率低一个数量级，但足以排除与小极化子相关的载流子晶格耦合。铁电畴壁中的传导现在是一种确定的现象，但输运物理的基本方面仍然难以捉摸。在这里，Campbell等人利用纳米级霍尔效应测量报告了锰酸钇导电畴壁中载流子的类型、密度和迁移率。
Enhanced conductivity at specific domain walls in ferroelectrics is now an established phenomenon. Surprisingly, however, little is known about the most fundamental aspects of conduction. Carrier types, densities and mobilities have not been determined and transport mechanisms are still a matter of guesswork. Here we demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls. Studying YbMnO3 single crystals, we have confirmed that p-type conduction occurs in tail-to-tail charged domain walls. By calibration of the AFM signal, an upper estimate of ∼1 × 1016 cm−3 is calculated for the mobile carrier density in the wall, around four orders of magnitude below that required for complete screening of the polar discontinuity. A carrier mobility of∼50 cm2V−1s−1 is calculated, about an order of magnitude below equivalent carrier mobilities in p-type silicon, but sufficiently high to preclude carrier-lattice coupling associated with small polarons. Conduction in ferroelectric domain walls is now an established phenomenon, yet fundamental aspects of transport physics remain elusive. Here, Campbell et al. report the type, density and mobility of carriers in conducting domain walls in ytterbium manganite using nanoscale Hall effect measurements.
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