A Novel Frequency-Selective Power Combiner/Divider in Single-Layer Substrate Integrated Waveguide Technology
A Novel Frequency-Selective Power Combiner/Divider in Single-Layer Substrate Integrated Waveguide Technology
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DOI：
10.1109/lmwc.2013.2269039
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发表时间：
2013-06
影响因子：
3
通讯作者：
U. Rosenberg;M. Salehi;J. Bornemann;E. Mehrshahi
中科院分区：
文献类型：
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作者：
U. Rosenberg;M. Salehi;J. Bornemann;E. Mehrshahi
介绍了一种单层基片集成波导（SIW）技术中的频率选择性功率合成器/分配器。基本构件由平面四腔结构组成，其中三个腔工作在SIW TE 101模式，一个腔工作在SIW TE 201模式。每个腔耦合到单元的一个端口。此外，整体配置考虑了每个谐振器与两个相邻谐振器的耦合。由于TE 201模腔的耦合变换特性，在第四个端口几乎隔离的情况下，每个端口到相邻两个端口的二阶3dB传递函数都可以得到。该新型合路器/分频器的设计频率为11 GHz，并在RT/Duroid 5870基板上原型制作。测量验证设计过程和设备的操作。
A frequency-selective power combiner/divider in single-layer substrate integrated waveguide (SIW) technology is introduced. The basic building block consists of a planar four cavity structure with three of them operated in SIW TE101 modes and one in SIW TE201 mode. Each cavity is coupled to one port of the unit. In addition the overall configuration considers couplings of each resonator to the two adjacent ones. Due to the coupling transformation properties of the TE201 mode cavity, second order 3 dB transfer functions are obtained from each port to two adjacent ones while the fourth port is almost isolated. The novel combiner/divider is designed for 11 GHz and prototyped on RT/Duroid 5870 substrate. Measurements verify the design process and operation of the device.