Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation
Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation
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通过 α 粒子辐照在外延生长的掺硼 p 型硅中引入亚稳态缺陷的电子和转变特性
DOI：
10.1063/1.121585
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发表时间：
1998
影响因子：
4
通讯作者：
G. Myburg
中科院分区：
文献类型：
--
作者：
M. Mamor;F. D. Auret;S. A. Goodman;W. Meyer;G. Myburg
在室温下，使用镅-241（Am-241）放射性核素，用α粒子对外延生长的硼掺杂p型Si薄膜（自由载流子密度为6-8×1016 cm−3）上的钛（Ti）肖特基势垒二极管进行辐照。本文报道了外延生长的具有亚稳特性的p型硅中α粒子辐照缺陷Hα2的电子和相变特性。由深能级瞬态光谱测定的能级和表观俘获截面分别为Ev+0.43 eV和1.4×10−15 cm 2。该缺陷可以使用传统的偏置开/关冷却技术来去除和重新引入。
Titanium (Ti) Schottky barrier diodes on epitaxially grown boron-doped p-type Si films with a free carrier density of 6–8×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. We report the electronic and transformation characteristics of an α-particle irradiation-induced defect Hα2 in epitaxially grown p-Si with metastable properties. The energy level and apparent capture cross section, as determined by deep-level transient spectroscopy, are Ev+0.43 eV and 1.4×10−15 cm2, respectively. This defect can be removed and re-introduced using a conventional bias-on/off cooling technique.