Fundamentally fastest optical processes at the surface of a topological insulator
Fundamentally fastest optical processes at the surface of a topological insulator
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DOI：
10.1103/physrevb.98.125410
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发表时间：
2018-07
影响因子：
3.7
通讯作者：
S. A. Oliaei Motlagh;Jhih-Sheng Wu;V. Apalkov;M. Stockman
中科院分区：
文献类型：
--
作者：
S. A. Oliaei Motlagh;Jhih-Sheng Wu;V. Apalkov;M. Stockman
我们预测，强光脉冲的单次振荡可以显著填充三维拓扑绝缘体Bi2Se3的表面导带。线偏振脉冲和圆偏振脉冲都会产生表面布里渊区布居干涉条纹的手性纹理。这些条纹构成了一个自参考电子全息图，携带了关于表面Bloch带的拓扑的信息，特别是关于低能哈密顿量的翘曲项的影响。这些电子干涉现象与石墨烯形成鲜明对比，在石墨烯中，线偏振脉冲没有手性织构，圆偏振脉冲没有干涉条纹。这些预测的倒易空间电子布居织构可以通过时间分辨角度分辨光电子能谱(TRARPES)实验测量，以获得拓扑绝缘体表面的非阿贝尔Berry曲率。
We predict that a single oscillation of a strong optical pulse can significantly populate the surface conduction band of a three-dimensional topological insulator, Bi2Se3. Both linearly- and circularly-polarized pulses generate chiral textures of interference fringes of population in the surface Brillouin zone. These fringes constitute a self-referenced electron hologram carrying information on the topology of the surface Bloch bands, in particular, on the effect of the warping term of the low-energy Hamiltonian. These electron-interference phenomena are in a sharp contrast to graphene where there are no chiral textures for a linearly-polarized pulse and no interference fringes for circularly-polarized pulse. These predicted reciprocal space electron-population textures can be measured experimentally by time resolved angle resolved photoelectron spectroscopy (TR-ARPES) to gain direct access to non-Abelian Berry curvature at topological insulator surfaces.