Germanium on silicon single-photon avalanche detectors using silicon-on-insulator substrates (Conference Presentation)
Germanium on silicon single-photon avalanche detectors using silicon-on-insulator substrates (Conference Presentation)
复制标题
使用绝缘体上硅衬底的硅上锗单光子雪崩探测器（会议演示）
DOI：
10.1117/12.2290403
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Ghisetti E
中科院分区：
文献类型：
--
作者：
Ghisetti E
在近红外波长下以门控盖革模式工作的单光子雪崩探测器 (SPAD) 可应用于量子密钥分配 (QKD)、人眼安全光探测和测距 (LIDAR)、3D 图像传感、量子增强成像和基于光子的量子信息处理。虽然 InGaAs SPAD 已商用，但其高成本和缺乏集成 SPAD 限制了其应用。我们之前已经在 1310 和 1550 nm 的 Si SPAD 上演示了在 100 K 下工作的垂直盖革模式 Ge，其中 Ge 用作吸收器，而噪声较低的 Si 用作雪崩增益区。在 100 K 和 1310 nm 下，单光子检测效率为 4%，暗计数率 (DCR) 为 5 MHz。
Single photon avalanche detectors (SPADs) operating in gated-Geiger mode at near infrared wavelengths have applications in quantum key distribution (QKD), eye-safe light detection and ranging (LIDAR), 3D image sensing, quantum enhanced imaging and photonic based quantum information processing. Whilst InGaAs SPADs are commercially available, the high cost and lack of integrated SPADs limit the applications. We have previously demonstrated vertical Geiger mode Ge on Si SPADs at 1310 and 1550 nm operating at 100 K where the Ge is used as an absorber and the lower noise Si is used as the avalanche gain region. At 100 K and 1310 nm a single photon detection efficiency of 4% was demonstrated with a dark count rate (DCR) of 5 MHz.