Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres
Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres
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DOI：
10.1016/j.matlet.2014.02.091
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发表时间：
2014-05
影响因子：
3
通讯作者：
Nam Han;Young Jae Park;Min Han;B. Ryu;Kang Bok Ko;S. Chandramohan;Chel-Jong Choi;T. Cuong;C. Hong
中科院分区：
文献类型：
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作者：
Nam Han;Young Jae Park;Min Han;B. Ryu;Kang Bok Ko;S. Chandramohan;Chel-Jong Choi;T. Cuong;C. Hong
利用金属-有机化学气相沉积技术在V型沟槽蓝宝石衬底上嵌入二氧化硅纳米球结构，在GaN外延层中实现了穿线位错密度和应力松弛的显著降低。通过在生长过程中在两个不同的情况下沉积二氧化硅纳米球，开始了包括选择性区域生长和横向过度生长的两步生长。该方法得到了高质量的GaN模板，X射线衍射摇摆曲线和显微拉曼光谱证实了这一点，并得到了透射电子显微镜的进一步证实。用这种方法制作的GaN发光二极管在光输出功率方面有了显着的提高。
A dramatic reduction in threading dislocation density and stress-relaxation was simultaneously achieved in GaN epilayer using a silica nanosphere embedded structure on V-groove patterned sapphire substrate by metal-organic chemical vapor deposition. By depositing silica nanospheres at two different instances during a growth process, a two-step growth that included selective area growth and lateral overgrowth was initiated. This approach led to GaN template of high crystal quality, which was confirmed from x-ray diffraction rocking curve and micro-Raman measurements and further corroborated by transmission electron microscopy. GaN light-emitting diode fabricated by this strategy showed a significant enhancement in the light output power.