Toward >25% Efficient Monolithic Epitaxial GaAsP/Si Tandem Solar Cells
Toward >25% Efficient Monolithic Epitaxial GaAsP/Si Tandem Solar Cells
复制标题
迈向%20>25%%20高效%20单片%20外延%20GaAsP/Si%20串联%20太阳能%20电池
DOI：
10.1109/pvsc40753.2019.8980574
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
C. Kerestes
中科院分区：
文献类型：
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作者：
T. Grassman;D. Derkacs;S. Whipple;A. Stavrides;S. Bremner;S. Ringel;Daniel L. Lepkowski;J. Boyer;D. Chmielewski;C. Yi;N. Western;H. Mehrvarz;A. Ho;C. Kerestes
我们在此报告了>20%效率的单片外延III-V/Si串联太阳能电池的发展进展。继我们之前演示的GaAs0.75P0.25/Si串联电池的AM1.5G效率为20.1%之后，我们已经进行了大量的努力，旨在优化顶部和底部亚电池，包括材料质量改进和详细的器件结构改进。到目前为止，我们已经展示了21.8%的AM1.5G GaAs0.75P0.25/Si串联电池，该电池使用了优化的，但仍然限制缺陷的GaAsP顶部电池与简单的扩散处理（发射极和背表面场）Si底部电池相结合。随着最近低位错密度III-V-on-Si外延材料平台的发展，以及底部电池对光子管理的增强，分析性能损失分析和效率预测表明，>25%在短期内是可以实现的，并且通过额外的整体优化可以达到30%。
We report here on progress made in the development of >20% efficient monolithic epitaxial III-V/Si tandem solar cells. Following our prior demonstration of a GaAs0.75P0.25/Si tandem cell with verified AM1.5G efficiency of 20.1%, we have undertaken intensive efforts aimed at optimization of the top and bottom subcells, involving both materials quality improvement and detailed device structure refinement. To date we have thus demonstrated 21.8% AM1.5G GaAs0.75P0.25/Si tandem cells making use of an optimized, but still defect-limited GaAsP top cell combined with a simple diffusion-processed (emitter and back-surface field) Si bottom cell. With recent development of a low dislocation density III-V-on-Si epitaxial materials platform, as well as bottom cell enhancements for photon management, analytical performance loss analysis and efficiency projections indicate that >25% is achievable in the near-term, and 30% within reach with additional holistic optimization.