Bulk-edge and bulk-hinge correspondence in inversion-symmetric insulators
Bulk-edge and bulk-hinge correspondence in inversion-symmetric insulators
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DOI：
10.1103/physrevresearch.2.013300
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发表时间：
2019-10
影响因子：
4.2
通讯作者：
R. Takahashi;Yutaro Tanaka;S. Murakami
中科院分区：
文献类型：
--
作者：
R. Takahashi;Yutaro Tanaka;S. Murakami
建立了反演对称绝缘体中体铰对应的一般证明。通过连续引入切割到三维二阶拓扑绝缘体，所得到的谱流反映了体本征态的奇偶性，必然导致通过该切割过程的带反转。结果表明，三维二阶拓扑绝缘体的二维平板总是二维陈氏绝缘体。
This paper establishes a general proof of bulk-hinge correspondence in inversion-symmetric insulators. By continuously introducing a cut to a three dimensional second order topological insulator, the resulting spectral flow reflects parities of the bulk eigenstates, necessarily leading to band inversions through this cutting procedure. As a result, it is shown that a two dimensional slab of a three dimensional second-order topological insulator is always a two-dimensional Chern insulator.