Basic properties mapping of anodic oxides in the hafnium-niobium-tantalum ternary system.
Basic properties mapping of anodic oxides in the hafnium-niobium-tantalum ternary system.
复制标题
DOI：
10.1080/14686996.2018.1498703
复制
发表时间：
2018
影响因子：
5.5
通讯作者：
Hassel AW
中科院分区：
文献类型：
--
作者：
Mardare AI;Mardare CC;Kollender JP;Huber S;Hassel AW
采用Hf、Nb和Ta共溅射沉积的薄膜组合库研究了Hf-Nb-Ta系统的基本性质。微观结构和晶体学的组成映射揭示了合金演化的相似性。六方铪的加入使合金发生明显的晶格畸变，导致含铪量大于32at.%的合金发生非晶化Hf和小于27和41原子% Nb和Ta。伏打电位和开路电位映射表示最高铪浓度的最小值。通过扫描液滴细胞显微镜对文库进行局部阳极化，揭示了阀金属行为。氧化物形成因子高于2 nm V−1，在含有大量Nb和Ta的成分区中被确定。电化学阻抗谱数据拟合允许混合氧化物的介电常数和电阻率被映射。它们的组成行为归因于母体金属合金的特性和纯氧化物的特殊性。Mott-Schottky分析表明所研究的所有Hf-Nb-Ta氧化物均具有n型半导体特性。施主密度和平带势的成分映射，并发现它们的变化主要与Nb量。在Hf-Nb-Ta母体金属及其阳极氧化物的映射中确定了协同效应。
A thin film combinatorial library deposited by co-sputtering of Hf, Nb and Ta was employed to characterise fundamental properties of the Hf-Nb-Ta system. Compositional mappings of microstructure and crystallography revealed similarities in alloy evolution. Distinct lattice distortion was observed upon addition of hexagonal Hf, leading to amorphisation of alloys containing more than 32 at.% Hf and less than 27 and 41 at.% Nb and Ta, respectively. Volta potential and open circuit potential mappings indicated minimal values for the highest Hf concentration. Localised anodisation of the library by scanning droplet cell microscopy revealed valve metal behaviour. Oxide formation factors above 2 nm V−1 were identified in compositional zones with high amounts of Nb and Ta. Fitting of electrochemical impedance spectroscopy data allowed electrical permittivity and resistivity of mixed oxides to be mapped. Their compositional behaviours were attributed to characteristics of the parent metal alloys and particularities of the pure oxides. Mott–Schottky analysis suggested n-type semiconductor properties for all Hf–Nb–Ta oxides studied. Donor density and flat-band potential were mapped compositionally, and their variations were found to be related mainly to the Nb amount. Synergetic effects were identified in mappings of Hf-Nb-Ta parent metals and their anodic oxides.
登录
查看更多内容
影响因子：
6.6
作者：
Hassel, AW;Seo, M
通讯作者：
Seo, M
影响因子：
2.5
作者：
Lill, Kirsten Agnes;Hassel, Achim Walter
通讯作者：
Hassel, Achim Walter
影响因子：
2.1
作者：
Grüger, H;Kunath, C;Pechstein, I
通讯作者：
Pechstein, I
DOI：
10.1016/s1468-6996(00)00003-6
发表时间：
2000-01-01
影响因子：
5.5
作者：
Koinuma, H.;Aiyer, H. N.;Matsumoto, Y.
通讯作者：
Matsumoto, Y.
基于石墨烯包裹介孔T-Nb2O5纳米球阳极和介孔碳涂层石墨烯阴极的高性能混合超级电容器
影响因子：
4
作者：
Ma, Guoqiang;Li, Ke;Huo, Kaifu
通讯作者：
Huo, Kaifu