Optimum strain configurations for carrier injection in near infrared Ge lasers
Optimum strain configurations for carrier injection in near infrared Ge lasers
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DOI：
10.1063/1.3691790
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发表时间：
2012-03
影响因子：
3.2
通讯作者：
O. Aldaghri;Z. Ikonić;R. Kelsall
中科院分区：
文献类型：
--
作者：
O. Aldaghri;Z. Ikonić;R. Kelsall
利用形变势和k·p方法研究了体Ge和Ge量子阱结构中Ge的直接谷和间接谷以及带隙收缩在不同拉伸应变条件下的行为。计算了在不同应变和生长条件下，将间接谷填充到Γ谷所需的掺杂密度，以及电子注入到Γ谷的效率，并确定了Ge激光器工作的最佳情况。
The behavior of direct and indirect valleys in Ge, and the bandgap shrinking, under different tensile-strain conditions in bulk Ge and Ge quantum well structures are explored using the deformation potential and k·p methods. The doping density required for filling the indirect valleys up to the Γ-valley is calculated for various strain and growth conditions, as well as the efficiency of electron injection into the Γ-valley, and the optimum cases for Ge laser operation are identified.