FINAL-STATE SYMMETRY EFFECTS IN PHOTOEMISSION OF THIN GD OVERLAYERS
FINAL-STATE SYMMETRY EFFECTS IN PHOTOEMISSION OF THIN GD OVERLAYERS
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DOI：
10.1088/0953-8984/1/37/006
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发表时间：
1989-09-18
影响因子：
2.7
通讯作者：
ONELLION, M
中科院分区：
文献类型：
--
作者：
DOWBEN, PA;LAGRAFFE, D;ONELLION, M
用角分辨光电子能谱研究了铜(100)面上Gd超薄覆盖层和铜(100)面结晶镍覆盖层的4f价带和浅核能级。作者观察到了一定的终态对称性，对于半层到四层的Gd薄膜，表明占据Gd5d带的主要是3z2-r2和j=3/2的特征。对于Cu(100)上的薄Gd覆盖层，5p3/2的特征似乎主要是z。这是Gd5d和5p本征态之间终态相互作用的结果。这些结果与观察到的光电子空穴态的屏蔽过程一起被讨论，并应用于从价带理解光电子共振。
The 4f valence band and shallow core levels of ultrathin Gd overlayers on Cu (100) and on crystalline nickel overlayers on Cu (100) have been investigated using angle-resolved photoemission. The authors have observed a definite selection of final-state symmetries which, for one-half to four-monolayer-thick Gd films, indicates that the occupied Gd 5d band is predominantly 3z 2-r 2 and j= 3/2 in character. The 5p 3/2 appears to be predominantly z in character for thin Gd overlayers on Cu (100). This occurs as a consequence of final-state interactions between the Gd5d and 5p eigenstates. These results, together with the observed screening processes of the photoemission hole state, are discussed and applied to the understanding of photoemission resonance from the valance bands.