A Study on Contact Resistance as a Function of Surface Treatment in Perovskite Field-Effect Transistors

A Study on Contact Resistance as a Function of Surface Treatment in Perovskite Field-Effect Transistors
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DOI:
10.1021/acsaelm.3c00149
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发表时间:
2023-05
影响因子:
4.7
通讯作者:
Colin Tyznik;Matthew Waldrip;Ryan P Sullivan;Motahhare Mirhosseini;Adam Berry;Sean Dwyer;Hurriyet Yuce Cakir;T. Coffey;Y. Loo;O. Jurchescu
Colin Tyznik;Matthew Waldrip;Ryan P Sullivan;Motahhare Mirhosseini;Adam Berry;Sean Dwyer;Hurriyet Yuce Cakir;T. Coffey;Y. Loo;O. Jurchescu
中科院分区:
材料科学3区
文献类型:
--
作者:
Colin Tyznik;Matthew Waldrip;Ryan P Sullivan;Motahhare Mirhosseini;Adam Berry;Sean Dwyer;Hurriyet Yuce Cakir;T. Coffey;Y. Loo;O. Jurchescu

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金属卤化物钙钛矿是一种多功能材料,已在各种光电器件中表现出卓越的性能。进展是显着的;然而,对电荷注入物理学的基本理解仍然难以捉摸,阻碍了进一步的进步。在这里,我们使用场效应晶体管 (FET) 研究表面功能化对苯乙基碘化锡铵 (PEA2SnI4) 薄膜中电荷注入和传输的影响。我们表明,自组装单层(SAM)既可以帮助减少肖特基势垒,又可以充当触点和钙钛矿薄膜之间的离子阻挡层,限制界面化学反应。因此,与未经处理的触点相比,接触电阻降低了 3 倍以上。分别考虑沟道和接触的贡献,讨论载流子迁移率的温度依赖性。我们的研究结果为金属卤化物钙钛矿中的电荷注入提供了定量框架,并将有助于太阳能电池、发光二极管以及X射线和光电探测器等高性能光电器件的进步。
Metal halide perovskites are versatile materials which have already demonstrated exceptional performance in diverse optoelectronic devices. The progress has been significant; however, the fundamental understanding of the physics of charge injection remains elusive, impeding further advancements. Here, we use field-effect transistors (FETs) to investigate the impact of surface functionalization on the charge injection and transport in thin films of phenethylammonium tin iodide (PEA2SnI4). We show that self-assembled monolayers (SAMs) can both assist in reducing the Schottky barrier and act as an ion blocking layer between the contact and the perovskite film, limiting interfacial chemical reactions. Consequently, the contact resistance is lowered by more than 3 times compared to untreated contacts. The temperature dependence of the charge carrier mobility is discussed considering the contributions from the channel and contacts, respectively. Our results provide a quantitative framework for the charge injection in metal halide perovskites and will contribute toward the progress of high-performance optoelectronic devices including solar cells, light-emitting diodes, as well as X-ray and photodetectors.