A nonvolatile memory device with very low power consumption based on the switching of a standard electrode potential
A nonvolatile memory device with very low power consumption based on the switching of a standard electrode potential
复制标题
DOI：
10.1063/1.4980031
复制
发表时间：
2017-04
期刊：
影响因子：
6.1
通讯作者：
I. Sugiyama;R. Shimizu;Tohru S. Suzuki;Kuniko Yamamoto;Hideyuki Kawasoko;S. Shiraki;T. Hitosugi
中科院分区：
文献类型：
--
作者：
I. Sugiyama;R. Shimizu;Tohru S. Suzuki;Kuniko Yamamoto;Hideyuki Kawasoko;S. Shiraki;T. Hitosugi
我们准备了一个非易失性存储器设备，可以可逆地在高和低开路电压（Voc）制度之间切换。该器件由夹在金属Li和Au电极之间的固体电解质Li 3 PO 4膜组成：Li/Li 3 PO 4/Au异质结构，其在室温下在玻璃衬底上制备。通过施加2.0和0.18 V的外电压，可以分别可逆地切换Voc为0.7和0.3 V的双稳态。在Li_3 PO_4/Au电极界面上形成的Au-Li合金是可逆开关的起源。
We prepared a nonvolatile memory device that could be reversibly switched between a high and a low open-circuit voltage (Voc) regime. The device is composed of a solid electrolyte Li3PO4 film sandwiched between metal Li and Au electrodes: a Li/Li3PO4/Au heterostructure, which was fabricated at room temperature on a glass substrate. The bistable states at Voc ∼ 0.7 and ∼0.3 V could be reversibly switched by applying an external voltage of 2.0 and 0.18 V, respectively. The formation and deformation of an ultrathin Au–Li alloy at the Li3PO4/Au electrode interface were the origin of the reversible switching.