Manipulating exciton fine structure in quantum dots with a lateral electric field
Manipulating exciton fine structure in quantum dots with a lateral electric field
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DOI：
10.1063/1.2431758
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发表时间：
2007-01-22
影响因子：
4
通讯作者：
Petroff, P. M.
中科院分区：
文献类型：
--
作者：
Gerardot, B. D.;Seidl, S.;Petroff, P. M.
研究了横向电场作用下单个自组装InGaAs量子点中中性激子的精细结构。斯塔克位移高达1.5毫电子伏，线宽的增加，和光致发光强度的减少，观察到由于电场。研究表明，由于单粒子波函数的主动操纵，横向电场强烈影响激子精细结构分裂。值得注意的是，分裂可以在大值和零值之间进行调整。(c)2007年，美国物理学会。
The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. (c) 2007 American Institute of Physics.