Utilizing Electronic Coherence to Probe a Deeply Embedded Quantum Well in Bimetallic Pb/Ag Films on Si(111)
Utilizing Electronic Coherence to Probe a Deeply Embedded Quantum Well in Bimetallic Pb/Ag Films on Si(111)
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利用电子相干性探测 Si(111) 上双金属 Pb/Ag 薄膜中深嵌的量子阱
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
T. Chiang
中科院分区：
文献类型：
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作者：
M. Brinkley;Yang Liu;N. Speer;T. Miller;T. Chiang
我们报告了一个实验，其中我们利用电子相干探测深嵌入的薄膜作为量子阱[1]。在Si（111）衬底上制备的原子级均匀的Ag膜上覆盖70 μ m厚的Pb膜，用角分辨光电子能谱（angle-resolvedphotoemission spectroscopy，AES）研究了其电子结构。尽管光电子逸出深度只有几个μ ngströms和一个不相称的铅/银界面，数据显示了一个引人注目的法布里-珀罗像的结构特征的银标准具深埋在铅覆盖层。我们的模拟清楚地说明了明显的电子结构的相干性，允许嵌入的Ag量子阱的表征。
We report an experiment in which we utilize electronic coherence to probe a deeply embedded thin film as a quantum well [1]. An atomically uniform Ag film prepared on Si(111) was covered by Pb films up to 70 Å thick, and the resulting electronic structure was examined by angle-resolved photoemission spectroscopy. Despite a photoemission escape depth of just a few Ångströms and an incommensurate Pb/Ag interface, the data reveal a striking FabryPérot-like structure characteristic of an Ag etalon buried deeply under the Pb overlayers. Our simulations clearly illustrate the manifest coherence of the electronic structures, permitting the characterization of the embedded Ag quantum well.