Emergent properties at oxide interfaces controlled by ferroelectric polarization

Emergent properties at oxide interfaces controlled by ferroelectric polarization
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DOI:
10.1038/s41524-021-00601-w
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发表时间:
2021-08
影响因子:
9.7
通讯作者:
Fan Ye;Yi Zhang;Christopher Addiego;Mingjie Xu;H. Huyan;X. Ren;Xiaoqing Pan
Fan Ye;Yi Zhang;Christopher Addiego;Mingjie Xu;H. Huyan;X. Ren;Xiaoqing Pan
中科院分区:
材料科学1区
文献类型:
--
作者:
Fan Ye;Yi Zhang;Christopher Addiego;Mingjie Xu;H. Huyan;X. Ren;Xiaoqing Pan

文献摘要

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Ferroelectric materials are characterized by the spontaneous polarization switchable by the applied fields, which can act as a “gate” to control various properties of ferroelectric/insulator interfaces. Here we review the recent studies on the modulation of oxide hetero-/homo-interfaces by ferroelectric polarization. We discuss the potential applications of recently developed four-dimensional scanning transmission electron microscopy and how it can provide insights into the fundamental understanding of ferroelectric polarization-induced phenomena and stimulate future computational studies. Finally, we give the outlook for the potentials, the challenges, and the opportunities for the contribution of materials computation to future progress in the area.