Critical domain size of the 7 x 7 structure for nucleation and growth on Si(111) quenched surfaces.
Critical domain size of the 7 x 7 structure for nucleation and growth on Si(111) quenched surfaces.
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Si(111) 淬火表面上成核和生长的 7 x 7 结构的临界域尺寸。
DOI：
10.1103/physrevlett.75.2372
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发表时间：
1995
影响因子：
8.6
通讯作者：
Ohdomari
中科院分区：
文献类型：
--
作者：
Hoshino;Kokubun;Fujiwara;Kumamoto;Ishimaru;Ohdomari
在550-700 ℃淬火Si（111）表面的原位扫描隧道显微镜观察表明，孤立的7× 7畴以单个SF三角形为结构单元成核或湮灭，并存在7× 7畴生长的临界核尺寸。该临界尺寸具有温度依赖性，这已经使用二维成核和生长理论在理论上进行了讨论。
In situ scanning tunneling microscopy observations of Si (111) quenched surfaces at 550–700 C have revealed that isolated 7× 7 domains nucleate or annihilate with a single SF triangle as a building unit and that there exists a critical nucleus size for 7× 7 domain growth. This critical size has a temperature dependence which has been theoretically discussed using the two-dimensional nucleation and growth theory.