Low temperature, transient liquid phase sintering of B_2O_3-SiO_2-doped Nd:YAG transparent ceramics
Low temperature, transient liquid phase sintering of B_2O_3-SiO_2-doped Nd:YAG transparent ceramics
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DOI：
10.1557/jmr.2011.45
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发表时间：
2011-05
影响因子：
2.7
通讯作者：
Adam J. Stevenson;E. Kupp;G. Messing
中科院分区：
文献类型：
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作者：
Adam J. Stevenson;E. Kupp;G. Messing
B_2O_3-SiO_2作为过渡液相烧结助剂，可使Nd：YAG陶瓷的烧结温度降低到1600 °C。1原子%在Nd_3xY_3-3xAl_5O_12（Nd：YAG）陶瓷中掺入0.34- 1.35mol%B_2O_3-SiO_2，在1100 ~ 1700 ℃烧结。膨胀法测量表明，相对于SiO_2掺杂的样品，B_2O_3-SiO_2掺杂提高了烧结中期的致密化速率。通过质谱法测定，在加热至1500 °C的样品中，B^3+含量降低至<5 ppm。对于B_2O_3-SiO_2掺杂的样品，最终阶段的致密化和晶粒生长遵循比SiO_2掺杂1at.%的样品更致密的烧结轨迹Nd：YAG陶瓷的致密化主要是由于后期致密化过程中SiO_2含量减少。当在真空或氧气中于1600 °C下烧结时，在中间阶段烧结期间增加的致密化动力学导致高度透明的Nd：YAG陶瓷。因此，透明的Nd：YAG陶瓷可以烧结，而不需要昂贵的难熔金属真空炉或压力辅助致密化。
B_2O_3-SiO_2 is shown to act as a transient liquid phase sintering aid that reduces the sintering temperature of Nd:YAG ceramics to 1600 °C. 1 at.% Nd_3xY_3-3xAl_5O_12 (Nd:YAG) ceramics were doped with 0.34–1.35 mol% B_2O_3-SiO_2 and sintered between 1100 and 1700 °C. Dilatometric measurements show that B_2O_3-SiO_2 doping increases the densification rate during intermediate-stage sintering relative to SiO_2-doped samples. B^3+ content is reduced to <5 ppm in samples heated to 1500 °C, as determined by mass spectrometry. For B_2O_3-SiO_2-doped samples, final stage densification and grain growth follow a more densifying sintering trajectory than SiO_2-doped 1 at.% Nd:YAG ceramics because there is less SiO_2 during final-stage densification. The increased densification kinetics during intermediate-stage sintering lead to highly transparent Nd:YAG ceramics when sintered at 1600 °C in either vacuum or oxygen. Thus, transparent Nd:YAG ceramics can be sintered without the need for expensive refractory metal vacuum furnaces or pressure-assisted densification.