HIGH-POWER INGAN SINGLE-QUANTUM-WELL-STRUCTURE BLUE AND VIOLET LIGHT-EMITTING-DIODES
HIGH-POWER INGAN SINGLE-QUANTUM-WELL-STRUCTURE BLUE AND VIOLET LIGHT-EMITTING-DIODES
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DOI：
10.1063/1.114359
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发表时间：
1995-09-25
影响因子：
4
通讯作者：
NAGAHAMA, S
中科院分区：
文献类型：
--
作者：
NAKAMURA, S;SENOH, M;NAGAHAMA, S
采用金属有机化学气相沉积法在蓝宝石衬底上生长了基于III-V氮化物的大功率蓝色和紫色发光二极管(LED)。采用InGaN单量子阱结构作为有源层。紫光LED的输出功率为5.6 mW，最大输出波长为405 nm，外量子效率为9.2%。蓝光LED在20 mA时输出功率为4.8 mW，峰值波长为450 nm，对应的外量子效率为8.7%，这是紫光和蓝光LED输出功率和量子效率的最高值。(C)1995年美国物理研究所。
High-power blue and violet light-emitting diodes (LEDs) based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. As an active layer, the InGaN single-quantum-well-structure was used. The violet LEDs produced 5.6 mW at 20 mA, with a sharp peak of light output at 405 nm, and exhibited an external quantum efficiency of 9.2%. The blue LEDs produced 4.8 mW at 20 mA and sharply peaked at 450 nm, corresponding to an external quantum efficiency of 8.7%, These values of the output power and the quantum efficiencies are the highest ever reported for violet and blue LEDs. (C) 1995 American Institute of Physics.